| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a minute pattern having a target critical dimension. SOLUTION: The method of forming a minute pattern includes: a step of forming a film to be etched, a first hard mask film and a rhombic insulating pattern on the upper part of a semiconductor substrate 100; a step of forming a first auxiliary pattern on the first hard mask film including the insulating pattern so as to have a contact hole having the same mode as that of the insulating pattern in the center among the four insulating patterns adjacent to one another via a rectangle; a step of etching the first auxiliary pattern so that the top of the insulating pattern may be exposed, thereby forming a second auxiliary pattern; a step of removing the exposed insulating pattern; a step of etching the first hard mask film in the etching process using the second auxiliary pattern as an etching mask, thereby forming a first hard mask pattern 102a; and a step of etching the etching target film by using the first hard mask pattern. COPYRIGHT: (C)2009,JPO&INPIT
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