| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic random access memory whose high integration is possible and manufacture is easy. SOLUTION: The magnetic random access memory includes a transistor which has a gate electrode 11a located above a surface of a substrate 1 and a first and second impurity diffusion regions 13a, 12 interposing a channel region below the gate electrode between them. A first conductive plug 14a is positioned on the first impurity diffusion region. A record element MRa is located on the first plug, is composed of a plurality of laminated layers, and keeps information correspondent to its state of inside magnetization. A first signal line 4a is situated on the record element. A second conductive 15 is placed on the second impurity diffusion region. An electric conductor MRc is positioned on the second plug and is composed of the same number of layers to a plurality of layers composing the record element, and the area of shape of the electric conductor MRc projected on the surface of the substrate is larger than the area of shape of the record element projected on the surface of the substrate. A second signal line 4b is located on the electric conductor. COPYRIGHT: (C)2009,JPO&INPIT
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