| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a flash memory element, capable of forming a gate pattern by using a hard mask pattern having a pitch not more than a resolution of an exposure apparatus. SOLUTION: The representative manufacturing method of a flash memory element includes: a step of forming a first hard mask film on a semiconductor substrate; a step of forming a large number of first hard mask patterns by etching the first hard mask film; a step of forming spacers on the top and side wall of each of the large number of first hard mask patterns; a step of forming a second hard mask film on the entire structure including the spacers; a step of executing an etching process so that the top of the spacer can be exposed, and forming a second hard mask pattern on a space between the spacers; and a step of removing the spacers. COPYRIGHT: (C)2009,JPO&INPIT
|
