发明名称 FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To easily form plasma polymerized high molecular film having a low dielectric constant by easily generating, maintaining, and controlling low power plasma. SOLUTION: The film forming method is capable of forming a thin film on the front surface of a substrate 2 by guiding the raw material gas into a vacuum chamber 1 and excites plasma by glow discharge between the substrate 2 within the vacuum chamber 1 and an opposition electrode 4 provided opposed to the substrate 2. In this film forming method, glow discharge is initiated between the substrate 2 and the opposition electrode 4 by applying a DC pulse voltage across the substrate 2 and the opposition electrode 4 while irradiating light of energy beyond the work function of the substrate 2 front surface to the substrate 2. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008282886(A) 申请公布日期 2008.11.20
申请号 JP20070124035 申请日期 2007.05.09
申请人 CANON ANELVA CORP 发明人 KOBAYASHI AKIKO
分类号 H01L21/312;C23C14/12;H01L21/31;H01L21/768;H01L23/522 主分类号 H01L21/312
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