| 摘要 |
To provide a method for forming an etching structure without difficulty to control the manufacturing conditions, and with a minute dimension exceeding the limit of exposure, while suppressing increase of manufacturing processes and increasing of manufacturing cost. Solution: With regard to a method for forming a structure formed by etching which is typified by a contact hole in the semiconductor such as a thin film transistor and to a method for manufacturing a display device using the structure, and more specifically relates to the method for the structure formed by etching which is typified by the contact hole formed using the technology of reflow in dissolving and to the method for manufacturing a thin film transistor substrate for the display device using the structure, the method for etching includes at least, a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing.
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