| 摘要 |
A dual-gate memory cell includes a first memory device and a second memory device each having a gate electrode and a charge storage gate dielectric layer. The first and second memory devices share a channel region and source and drain regions. Such a memory cell is read by sensing the charge in one of the dielectric layers by applying a first voltage in the gate electrode associated with the dielectric layer sensed, and applying a second voltage substantially different than the first voltage in the other dielectric layer.
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