METHOD FOR IN-SITU REPAIRING PLASMA DAMAGE AND METHOD FOR FABRICATING TRANSISTOR DEVICE

摘要

A method for in-situ repairing plasma damage, suitable for a substrate, is provided. A component is formed on the substrate. The formation steps of the component include a main etching process containing plasma. The method involves performing a soft plasma etching process in the apparatus of the main etching process containing plasma to remove a portion of the substrate. The soft plasma etching process is less than 30% of the power used in the main etching process.