| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for fabricating a bulk acoustic wave (BAW) device comprising: providing a growth substrate; and growing a Group-III nitride epitaxial layer on the growth substrate. <P>SOLUTION: A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first metal electrode combination is flip-chip mounted on the carrier substrate, The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
