| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device of an SOI structure which satisfies both a stabilization of fixing a body potential and a performance maintenance of an insulating gate transistor, and a manufacturing method thereof. SOLUTION: In the semiconductor device, MOS transistors Q11 containing a polysilicon gate 6 and a source-drain diffusion region 11a are formed in a body, a body adjacent region A1 and a body peripheral region A2. A body region which is an SOI layer 2 under the polysilicon gate 6, the body which is its adjacent region and the body adjacent region A1 have a body SOI thickness d11, and the body peripheral region A2 in which a principal part of the source-drain diffusion region 11a is formed has a body peripheral SOI thickness d12. As the body and the body adjacent region A1 are formed deeper than the body peripheral region A2, a relationship of the body SOI thickness d11 > the body peripheral SOI thickness d12 is satisfied. A source-drain region formation height Hsd and a gate-channel formation height Hgc are formed at a height which is substantially same. COPYRIGHT: (C)2009,JPO&INPIT
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