| 发明名称 |
LIGHT EMITTING DIODE DEVICE LAYER STRUCTURE USING AN INDIUM GALLIUM NITRIDE CONTACT LAYER |
| 摘要 |
A light emitting diode device layer structure including a p-type contact layer that contains at least some indium (In), wherein the p-type contact layer is a not-intentionally doped strained nitride contact layer.
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| 申请公布号 |
US2008283854(A1) |
申请公布日期 |
2008.11.20 |
| 申请号 |
US20080113745 |
申请日期 |
2008.05.01 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
IZA MICHAEL;ASAMIZU HIROKUNI;VAN DE WALLE CHRISTIAN G.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L33/02;H01L33/32;H01L33/40 |
主分类号 |
H01L33/02 |
| 代理机构 |
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