发明名称 |
IN SITU MONITORING OF WAFER CHARGE DISTRIBUTION IN PLASMA PROCESSING |
摘要 |
A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.
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申请公布号 |
US2008285202(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20070748560 |
申请日期 |
2007.05.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOYD KEVIN M.;GALLO JAMES A.;HIGGINS EDWARD P.;REATH MARK L.;SHIFFLER BARBARA L.;WONG JUSTIN |
分类号 |
H01L21/683 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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