SEMICONDUCTOR COMPONENT, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF

摘要

The invention relates to a semiconductor element having at least one germanium-containing semiconductor layer. The semiconductor layer has at least one layer containing silicon carbide on the back thereof, which is to say on the side facing away from incident light, serving to reflect radiation and as backside passivation or a diffusion barrier. The invention further relates to a method for producing such semiconductor elements. The semiconductor elements according to the invention are used particularly as thermophotovoltaic cells or multiple solar cells on a germanium basis.