| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that suppresses variations in the value of a constant current to be energized, can be manufactured efficiently, and can be configured as a constant-current diode, and to provide a method of manufacturing the semiconductor device. SOLUTION: The semiconductor includes: a high-resistance layer 2 of a first conductivity type; a semiconductor substrate region 20 of a second conductivity type, which is provided in the high-resistance layer 2; a plurality of gate diffusion layers 6 arranged on the surface of the high-resistance layer 2; a drain region 12 of the first conductivity type, which is arranged in the plurality of the gate diffusion layers 6 on the surface of the high-resistance layer 2; an element isolation region 24 of the second conductivity type, which is arranged at a sidewall section where the high-resistance layer 2 is etched to a semiconductor substrate region 20 around the plurality of the gate diffusion layers 6; a source region 8 arranged between the element isolation region 24 and the gate diffusion layer 6 on the surface of the high-resistance layer 2; a drain electrode 14 provided in a drain region 12; and a source electrode 10 provided in the source region 8 and the gate diffusion layer 6. The method of manufacturing a semiconductor device is also provided. COPYRIGHT: (C)2009,JPO&INPIT
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