| 摘要 |
PROBLEM TO BE SOLVED: To provide an inductor for semiconductor integrated circuit, a vast cross section of which is obtained, a resistance of which can be remarkably decreased, to improve a Q value, and thickness uniformity of which is high, and to provide a manufacturing method thereof. SOLUTION: A spiral inductor 40 is formed on a top layer wiring layer 18 of a multilayered wiring layer formed by a damascene method. A barrier metal layer is patterned on an insulation film 17a so as to make contact with a top layer wiring 29, where the top layer wiring 29 is formed on the insulation film 17a. Then, after a protection insulation film is formed on the whole surface, a part on the barrier metal layer of the protection insulation film is opened, and another barrier metal layer is formed on the whole of the part. A Cu film is formed by plating with this barrier metal layer as a plating electrode, and then the inductor 40 is formed by the Cu film being wet-etched. Therefore, the inductor 40 can be made thick in film thickness and broad in line width. COPYRIGHT: (C)2009,JPO&INPIT
|
