| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a reliable semiconductor device, where the number of defects in a plating film after a CMP process is reduced. SOLUTION: The manufacturing method includes: a process for forming a seed film on a substrate including a recess on which a fine pattern is formed and a recess formed wider than the fine pattern; and an electrolytic plating process for burying the recesses with a plating liquid containing an accelerator and a retarder. The electrolytic plating process includes: a first electrolytic plating process for burying the recess on which a fine pattern is formed with first current density; a first reverse bias process for energizing current having a polarity differing from that in the electrolytic plating process with second current density; a process for performing second electrolytic plating with third current density larger than the first current density; a second reverse bias process for performing energization with fourth current density; and a process for performing third electrolytic plating with fifth current density larger than the first current density. An absolute value of an integrated quantity of current in the second reverse bias process is larger than that of an integrated quantity of current in the first one. COPYRIGHT: (C)2009,JPO&INPIT
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