Image Sensor and Method for Manufacturing the Same

摘要

An image sensor according to one embodiment of the present invention includes a semiconductor substrate having a CMOS circuit formed therein; an interlayer dielectric layer formed on the semiconductor substrate and including a trench formed therein; a metal wiring and a first conductive layer formed within the trench of the interlayer dielectric layer; an intrinsic layer formed on the semiconductor substrate including the first conductive layer and the interlayer dielectric layer; and a second conductive layer formed on the intrinsic layer.