| 摘要 |
Provided is an SOI substrate manufacturing method which includes a step of preparing a bond wafer and a base wafer which are composed of single crystal silicon wafers; a step of forming an oxide film at least on a surface of either the bond wafer or the base wafer; a step of bonding the bond wafer and the base wafer through the oxide film; a step of performing low-temperature heat treatment to the bonded substrate at 400°C or higher but not higher than 1,000°C; a step of thinning the bond wafer into an SOI layer; and a step of improving bonding strength by performing high-temperature heat treatment at a temperature higher than 1,000°C . In the case of manufacturing a thick SOI substrate provided with an embedded oxide film having a thickness of 3µm or more by bonding method, the SOI substrate having the high-quality SOI layer is provided by suppressing generation of slip dislocation. |
