摘要 |
<p>To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP>, and the second electrode is connected with the drain electrode of the thin film transistor.</p> |
申请人 |
CANON KABUSHIKI KAISHA;OFUJI, MASATO;ABE, KATSUMI;HAYASHI, RYO;SANO, MASAFUMI;KUMOMI, HIDEYA |
发明人 |
OFUJI, MASATO;ABE, KATSUMI;HAYASHI, RYO;SANO, MASAFUMI;KUMOMI, HIDEYA |