发明名称 LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME
摘要 <p>To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm&lt;SUP&gt;2&lt;/SUP&gt;V&lt;SUP&gt;-1&lt;/SUP&gt;s&lt;SUP&gt;-1&lt;/SUP&gt;, and the second electrode is connected with the drain electrode of the thin film transistor.</p>
申请公布号 WO2008139940(A1) 申请公布日期 2008.11.20
申请号 WO2008JP58296 申请日期 2008.04.23
申请人 CANON KABUSHIKI KAISHA;OFUJI, MASATO;ABE, KATSUMI;HAYASHI, RYO;SANO, MASAFUMI;KUMOMI, HIDEYA 发明人 OFUJI, MASATO;ABE, KATSUMI;HAYASHI, RYO;SANO, MASAFUMI;KUMOMI, HIDEYA
分类号 H01L27/32 主分类号 H01L27/32
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