| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability of wiring, while preventing the trench width from enlarging in a dual-damascene processing process. SOLUTION: An interlayer insulating film 105 is formed on a first metal wiring 103, and a via hole is made in the interlayer insulating film 105. A first barrier metal 109 is formed on the sidewall inside the via hole, and an organic film is formed in the via hole where the first barrier metal 109 is formed. After etching the organic film to a predetermined position, the first barrier metal 109 exposed by etch back is etched by using the organic film as a mask. Subsequently, the interlayer insulating film 105 is etched to a predetermined position, thus forming a trench. Thereafter, the organic film 110 remaining in the via hole is removed, and a second barrier metal 113 is formed on the first barrier metal 109 in the via hole and on the sidewall of the trench. A second metal wiring 115 is formed in the via hole, where the second barrier metal 113 is formed inside the trench. COPYRIGHT: (C)2009,JPO&INPIT |
