| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming apparatus, a method for cleaning the thin film forming apparatus, and a thin film forming method, capable of removing fluorine having entered into materials in the inside of an apparatus. SOLUTION: A film forming gas is supplied to the inside of a reaction tube 2 of a heat treatment device 1 to form a silicon nitride film on a semiconductor wafer, and a cleaning gas is supplied to the inside of the reaction tube 2 to remove a silicon nitride attached to the inside of the heat treatment device 1. Then, the temperature inside of the reaction tube 2 is increased to a predetermined temperature, and an exhausting gas is supplied into the inside of the reaction tube 2 having the increased temperature. In this way, the exhausting gas is activated to generate radicals. The generated radicals can remove the fluorine contained in a quartz of the reaction tube 2 from the quartz of the reaction tube 2. COPYRIGHT: (C)2009,JPO&INPIT
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