| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method for improving a withstand voltage with high reliability in a so-called mesa type semiconductor device. SOLUTION: An insulating film 5 and a semiconductor substrate 1 are selectively removed by anisotropic etching where a resist layer is used as a mask, and a groove 8 is formed with a side wall substantially perpendicular to the principal surface of the semiconductor substrate 1. Then, the groove 8 undergoes isotropic etching. Roughness generated on the inner wall of the groove 8 is removed and the inner wall of the groove 8 is flattened. Simultaneously, the etching proceedes also horizontally, and thereby an upper part 10 of the groove 8 is inclined so that it is widened as it approaches the surface side of the semiconductor substrate 1. Then, a passivation film 11 is formed in the groove 8. Further, the semiconductor substrate 1 or the like is cut along a predetermined dicing line to obtain individual chip-shaped semiconductor devices. COPYRIGHT: (C)2009,JPO&INPIT
|
