| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which the coverage of wiring in a step can be improved, micro wiring can be formed and an increase in parasitic capacity among wiring can be suppressed. SOLUTION: The method is used to manufacture a semiconductor device that has an insulation film wherein a connection hole is formed on one main surface side of a substrate and wiring formed on the insulation film. The method includes a step (conductive formation step) to form a conductive part at least in the connection hole by using a liquid conductive material, and a step (conductive removal step) to remove a conductive part formed at a part other than the inside of the connection hole by wet etching. COPYRIGHT: (C)2009,JPO&INPIT
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