METHOD AND STRUCTURES FOR MEASURING GATE TUNNELING LEAKAGE PARAMETERS OF FIELD EFFECT TRANSISTORS

摘要

A structure (100) and method for measuring leakage current. The structure includes: a body (105) formed in a semiconductor substrate (175); a dielectric layer (125/130) on a top surface of the silicon body (105); and a conductive layer (110) on a top surface of the dielectric layer (125/130), a first region of the dielectric layer (125/130) having a first thickness (T1) and a second region of the dielectric layer (125/130) between the conductive layer (110)and the top surface of the body (105) having a second thickness (T2), the second thickness (T2) different from the first thickness (T1). The method includes, providing two of the above structures (100) having different areas of first and the same area of second or having different areas of second and the same area of first dielectric regions (125/130), measuring a current between the conductive layer (110) and the body (105) for each structure (100) and calculating a gate tunneling leakage current based on the current measurements and dielectric layer (125/130) areas of the two devices.