| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device of high conversion efficiency by providing a method of forming an excellent bonding boundary between a transparent conducive film and a photoelectric conversion unit. <P>SOLUTION: In the manufacturing method of the photoelectric conversion device comprising at least the transparent conductive film composed of zinc oxide formed by an MOCVD (metal organic chemical vapor deposition) method and at least one or more photoelectric conversion units disposed in the order of a p-type semiconductor layer, the photoelectric conversion layer of a practically intrinsic semiconductor and an n-type semiconductor layer in the order from a light incidence direction, the p-type semiconductor layer adjacent to the transparent conductive film of the photoelectric conversion unit closest to the light incidence side is configured such that a crystalline p-type semiconductor layer and an amorphous p-type semiconductor layer are successively laminated in the order from the light incidence direction, and a hydrogen plasma treatment process of executing hydrogen plasma treatment to the transparent conductive film is provided before the process of forming the crystalline p-type semiconductor layer adjacent to the transparent conductive film. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
