| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture all the semiconductor devices of a common anode type, a common cathode type and a doubler type by just changing the design of an inner lead connecting process without changing the design to dispose a semiconductor element upside down. <P>SOLUTION: In the manufacturing method of the semiconductor device for which a lead terminal L3 is disposed between a lead terminal L1 and a lead terminal L2, the semiconductor elements C1 and C2 are loaded on a semiconductor element loading part L3A extending from the lead terminal L3 and the semiconductor elements C1 and C2 are sealed with a resin 2 so that the lead terminals L1, L2 and L3 and a part of the semiconductor element loading part L3A are projected from the resin 2, an insulating layer 1A is disposed between electrodes C1K and C2K on the lower side of the semiconductor elements C1 and C2 and the semiconductor element loading part L3A, a conductor pattern 1B1 formed on the upper surface of the insulating layer 1A and the electrode C1K on the lower side of the semiconductor element C1 are bonded, and a conductor pattern 1B2 and the electrode C2K on the lower side of the semiconductor element C2 are bonded. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
