METHOD OF MANUFACTURING PMOS TRANSISTOR, AND METHOD OF MANUFACTURING CMOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a PMOS transistor and a CMOS transistor having excellent performance through a simple process. SOLUTION: A method of manufacturing a PMOS transistor comprises the steps of: forming a gate oxide film pattern 102a on a substrate 100 and then layering a gate structure containing a gate electrode 104 thereon; forming a plurality of impurity regions by implanting impurity elements consisting of group III of periodic table into regions under both side substrate surface layers which are adjacent to the gate structure at both sides; forming an impurity diffusion prevention film on the surfaces of the substrate and the gate structure; forming a silicon nitride film on the impurity diffusion prevention film; and heat-processing the substrate to form a strained silicon region between the impurity regions when the impurity elements contained in the impurity regions are activated. COPYRIGHT: (C)2009,JPO&INPIT