发明名称 |
NITRIDE-ENCAPSULATED FET (NNCFET) |
摘要 |
A double-gate field effect transistor (DGFET) structure and method of forming such a structure in which the parasitic capacitance under the source/drain regions is substantially reduced are provided. In the present invention, self-aligned isolation regions are provided to reduce the parasitic capacitance in the DGFET structure. Additionally, the present invention encapsulates the silicon-containing channel layer to enable the back-gate to be oxidized to a greater extent thereby reducing the parasitic capacitance of the structure even further.
|
申请公布号 |
US2008286930(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080142394 |
申请日期 |
2008.06.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;HANAFI HUSSEIN I.;SOLOMON PAUL M. |
分类号 |
H01L21/336;H01L21/76;H01L21/265;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|