| 摘要 |
A method of manufacturing a semiconductor device may include the steps of: forming a doped polysilicon film by implanting or incorporating dopant ions simultaneously with forming a silicon film; forming a doped polysilicon pattern by patterning the doped polysilicon film; forming a spacer on sides of the doped polysilicon pattern; and forming source and drain regions using the polysilicon pattern and the spacer as a mask.
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