| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a semiconductor layer having more than two types of average crystal particle diameter can be directly or indirectly formed on the same substrate, and consequently the crystal particle diameter is controlled so as to be constant in an average crystal particle number Na crossing a current-flowing direction in a channel region as a TFT active layer in the TFT's of different sizes. SOLUTION: The semiconductor device has a semiconductor layer with a small particle-size crystal region r1 and a large particle-size crystal region r2 grown in the lateral direction and formed directly or indirectly on the same substrate, a TFT specifying the small particle-size crystal grown in the lateral direction as a channel region, and a TFT specifying the large particle-size crystal grown in the lateral direction as a channel region. The average of the crystal particle number crossing a current-flowing direction in the channel region of the small particle-size crystal grown in the lateral direction is equal to that in the channel region of the large particle-size crystal grown in the lateral direction. COPYRIGHT: (C)2009,JPO&INPIT
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