| 摘要 |
PROBLEM TO BE SOLVED: To prevent a device from causing defects without making unwanted constituents to infiltrate into a seam, even if the aspect ratio of an inter-electrode insulating film formed in between a plurality of laminated layer gate electrodes is high and a seam is generated therein. SOLUTION: In the method of manufacturing a semiconductor device, a silicon nitride film 12 on a polycrystalline silicon layer 6 is removed after a silicon nitride film 14 is formed on a silicon oxide film 8 and adjacent to a side surface of the polycrystalline silicon layer 6. Because of this, when the upper surface of the polycrystalline silicon layer 6 is cleaned without extending the seam 8a, since the silicon nitride film 14 is formed as a cap insulating film to cover the upper region of the seam 8a, even if the seam 8a is formed on a center portion of the silicon oxide film 8 in wet-etching the upper surface of the polycrystalline silicon layer 6 for cleaning. COPYRIGHT: (C)2009,JPO&INPIT
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