发明名称 Substrate processing apparatus and cleaning method therefor
摘要 A substrate processing apparatus has a pressure-reducible reaction chamber, a substrate support provided in the reaction chamber, a gas inlet port provided in a wall portion of the reaction chamber to introduce a gas into the reaction chamber, a first plate provided between the substrate support and the gas inlet port in the reaction chamber and having a plurality of first holes for dispersing the gas introduced from the gas inlet port into the reaction chamber, and a second plate provided between the substrate support and the first plate in the reaction chamber in opposing relation to the first plate and having a plurality of second holes for further dispersing the gas dispersed by the first plate. The first and second plates can be moved relatively to each other such that a spacing between the first and second plates is variable.
申请公布号 US2008283086(A1) 申请公布日期 2008.11.20
申请号 US20070898697 申请日期 2007.09.14
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 MATSUBARA TOSHIO;UEDA SATOSHI;SATOU HIROYUKI;UCHIJIMA HIDETO
分类号 B08B9/027;B08B6/00;B08B7/02;C23C16/44;C23C16/455;H01L21/3065;H01L21/31 主分类号 B08B9/027
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