发明名称 |
Method of growing gan crystal on silicon substrate, and light emitting device and method of manufacturing thereof |
摘要 |
Example embodiments are directed to a method of growing GaN single crystals on a silicon substrate, a method of manufacturing a GaN-based light emitting device using the silicon substrate, and a GaN-based light emitting device. The method of growing the GaN single crystals may include forming a buffer layer including a TiN group material or other like material on a silicon substrate, forming a nano-pattern including silicon oxide on the buffer layer, and growing GaN single crystals on the buffer layer and the nano-pattern.
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申请公布号 |
US2008283821(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080073097 |
申请日期 |
2008.02.29 |
申请人 |
SAMSUNG CORNING CO., LTD. |
发明人 |
PARK SUNG-SOO;LEE JUNE-KEY |
分类号 |
H01L21/205;H01L33/00;H01L33/12;H01L33/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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