发明名称 |
Etching solution for multiple layer of copper and molybdenum and etching method using the same |
摘要 |
An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.
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申请公布号 |
US2008286974(A1) |
申请公布日期 |
2008.11.20 |
申请号 |
US20080219446 |
申请日期 |
2008.07.22 |
申请人 |
KIM SEONG-SU;CHOI YONG-SUK;CHAE GEE-SUNG;JO GYOO-CHUL;KWON OH-NAM;LEE KYOUNG-MOOK;HWANG YONG-SUP;LEE SEUNG-YONG |
发明人 |
KIM SEONG-SU;CHOI YONG-SUK;CHAE GEE-SUNG;JO GYOO-CHUL;KWON OH-NAM;LEE KYOUNG-MOOK;HWANG YONG-SUP;LEE SEUNG-YONG |
分类号 |
H01L21/306;H01L21/311;B44C1/22;C23F1/18;C23F1/26;C23F1/30;G02F1/1365;H01L21/308;H01L21/3213;H01L21/336;H01L29/786 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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