| 发明名称 |
SCALABLE NONVOLATILE MEMORY |
| 摘要 |
Various magnetoresistive memory cells and architectures are described which enable nonvolatile memories having high information density.
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| 申请公布号 |
US2008285331(A1) |
申请公布日期 |
2008.11.20 |
| 申请号 |
US20080120549 |
申请日期 |
2008.05.14 |
| 申请人 |
INTEGRATED MAGNETOELECTRONICS CORP. |
发明人 |
TOROK E. JAMES;FLEMING DAVID LESLIE;WUORI EDWARD;SPITZER RICHARD |
| 分类号 |
G11C11/00;H01S4/00 |
主分类号 |
G11C11/00 |
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