| 摘要 |
1,247,585. Depositing inorganic substances. SIEMENS A.G. 14 Jan., 1969 [15 Jan., 1968], No. 2062/69. Heading C1A. A process for the deposition of a layer of an inorganic material on to the surface of a semiconductor body, contained in a tubular reaction vessel and heated through the wall thereof, from a reaction gas continuously introduced into said vessel, comprises directing fresh reaction gas, entering said vessel at a temperature of at least 100‹ C. below that of said body, radially against a part of the wall of said vessel which is at a temperature above or not more than 50‹ C. below that of said body and thereafter directing the gas to said body at so high a velocity that deposition of the said layer first takes place at the location of said body. The deposited layer may be an insulating protective layer, e.g. of SiO 2 , Si 3 N 4 , or alumina, which may be deposited from reaction gases containing esters. Alternatively, it may be an epitaxially grown layer of a semi-conductor material. The reaction vessel is preferably made of high-purity quartz. The entering reaction gas may conveniently be directed towards the walls of the reaction vessel by an obstacle, e.g. a baffle, interposed in the direct path of the reaction gas to the semiconductor body. |
