| 摘要 |
1,247,214. Forming single crystals. INTERNATIONAL BUSINESS MACHINES CORP. 10 Jan., 1969 [15 Jan., 1968], No. 1531/69. Heading B1S. [Also in Division H1] A single crystal is formed in a recess in a non-monocrystalline substrate by placing a body of a first material in the recess and melting it under an inert atmosphere, bring- ing an atmosphere containing a second material into contact with the body to cause absorption of the second material into the body while maintaining the body above the eutectic temperature of the two materials and also maintaining a sufficient temperature gradient across the body to cause nucleation at only a single point on the body, the higher tempera - ture of the gradient being at the exposed part of the body, and maintaining these conditions until the desired height of single crystal is obtained, the crystal being formed from the second material or a compound or mixture thereof with the first material. Nucleation may be initiated by maintaining the body at a first predetermined temperature until its melt becomes supersaturated with the second material with respect to some lower predetermined temperature, whereupon the body is lowered in temperature to this point. The first material may be gold, boron, gallium or indium and the second material silicon, germanium, phosphorus, arsenic or antimony obtained from the vapour of a hydride or halide. Specified substrates are quartz or a ceramic of metal oxide(s). If the crystals are of a semiconductor material they may each form part of a semiconductor device, e.g. each crystal may have a monolithic integrated circuit formed in it.
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