发明名称 Fabrication Method of Semiconductor Integrated Circuit Device
摘要 A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape.
申请公布号 US2008286948(A1) 申请公布日期 2008.11.20
申请号 US20080170020 申请日期 2008.07.09
申请人 MIYAZAKI CHUICHI;ABE YOSHIYUKI;UEMATSU TOSHIHIDE;KIMURA MINORU;SUZUKI KAZUNARI;ODAGIRI MASAO;SUGA HIDEYUKI;TAKATA MANABU 发明人 MIYAZAKI CHUICHI;ABE YOSHIYUKI;UEMATSU TOSHIHIDE;KIMURA MINORU;SUZUKI KAZUNARI;ODAGIRI MASAO;SUGA HIDEYUKI;TAKATA MANABU
分类号 H01L21/00;H01L21/301;H01L21/304;H01L21/306;H01L21/314;H01L21/316;H01L21/46;H01L21/52;H01L21/60;H01L21/68;H01L21/78;H01L21/82 主分类号 H01L21/00
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