| 摘要 |
A method for fabricating a metal pad is disclosed. The fabrication method includes the step of selectively etching a wire insulation film formed on a semiconductor substrate to form a pattern, such as a dual damascene pattern, having plural vias in one trench. A metal film is deposited to fill the pattern and an insulation film is formed on the metal film. Further, the method includes removing the insulation film and the metal film to expose a surface of the wire insulation film to thereby form a metal pad and via contacts.
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