发明名称 |
Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device |
摘要 |
<p>Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.</p> |
申请公布号 |
EP1993150(A2) |
申请公布日期 |
2008.11.19 |
申请号 |
EP20080008617 |
申请日期 |
2008.05.07 |
申请人 |
SONY CORPORATION |
发明人 |
OHMAE, AKIRA;ARIMOCHI, MASAYUKI;MITOMO, JUGO;FUTAGAWA, NORIYUKI;HINO, TOMONORI |
分类号 |
C30B25/18;C30B29/40;H01L21/20;H01L33/00;H01L33/32 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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