A METHOD FOR LASER TREATMENT OF IMPLANTABLE DEVICES, IMPLANTABLE DEVICES OBTAINED USING SAID METHOD, AND A LASER SYSTEM FOR TREATMENT OF IMPLANTABLE DEVICES

摘要

Method for the laser treatment of implantable devices comprising the step of treating a surface of the implantable device (1) via a diode-pumped solid-state laser (DPSS) in Q-switch regime for creating on the device itself a surface morphology comprising a controlled distribution of pores (5) having a diameter and depth of between 3 and 150 µm and preferably 5-20 µm, and a pitch of between 5 and 300 µm and preferably between 10 and 30 µm.