发明名称 Semiconductor bodies with different con-duct -
摘要 <p>The silicon body is first coated with a surface layer containing doping agents, e.g. boron or phosphorus glass, and then with an insulation layer e.g. pyrolytic SiO2 or Si3N4. Windows are then made in the insulation at those points where a lower conductivity is required and a single diffusion step carried out in an oxidizing or inert atmosphere. A third zone may be formed by removing both layers from one area, and depositing a further layer of insulation directly through that window on to the body and by removing the insulation layer only from a second areas as above.</p>
申请公布号 FR2077414(A3) 申请公布日期 1971.10.22
申请号 FR19710002990 申请日期 1971.01.29
申请人 ITT INDUSTRIES INC,US 发明人
分类号 H01L21/225;(IPC1-7):01L7/00 主分类号 H01L21/225
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