METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

The electric isolation between the recess pattern and SEG plug can achieved in the SEG plug application. The gap fill margin can be secured as the height of plug. The method of manufacturing the semiconductor device is provided. A step is for forming the gate pattern on the substrate. A step is for recessing the substrate between the gate patterns. A step is for forming the gate spacer in the entire surface including gate pattern. A step is for etching the gate spacer of the recess floor. A step is for forming plug on the recess. The gate pattern is the recess gate pattern. The gate spacer is the nitride film. The gate spacer is formed with the thickness of 80 ~150 Å.