| 摘要 |
A method for heat-treating an SOI substrate which has a silicon surface comprises a step of heat-treating said SOI substrate in a hydrogen-containing reducing atmosphere with keeping said SOI substrate in a state disposed opposite to a plane which comprises a material comprised of a non-oxidized silicon as a main component with a predetermined distance separating them, wherein a plurality of said SOI substrates are arranged such that each SOI substrate is placed on a tray which has a rear surface of non-oxidized silicon with the SOI layer facing upward and vis-à-vis the rear surface of the tray located immediately thereabove. |
