| 摘要 |
The contact characteristic between the storage electrode and the storage electrode contact plug can be improved by one storage electrode contact process. The manufacturing process of the semiconductor device can be simplified. Provided is the method of forming a storage node of the semiconductor device. The lower insulating layer having the bit line is formed on the semiconductor substrate and the photosensitive film(51) is coated on the underlying insulating layer. The photosensitive film is exposed by using the exposure mask for the storage node contact having light-transmitting region of rectangular shape. The is and the storage electrode contact hole region(53) is defined by developing the photosensitive film.
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