| 摘要 |
The small gap of the size can completely filled without generating voids in a semiconductor device of 45nm or less. The reverse gap fill method of the semiconductor device is provided. A step is for forming the filling material layer on the substrate(210). A step is for forming the mask pattern(230) in the gap formation location on the filling material layer. A step is for forming the gap fill pattern by etching the filling material layer using the mask pattern as the barrier layer. A step is for removing the mask pattern. A step is for forming an target layer on the substrate including gap fill pattern. The step is for planarizing the top of the target layer to expose the top of the gap fill pattern.
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