| 摘要 |
Problems generated between adjacent TiN and silicon layers can be solved although the thermal expansion and shrinkage of the silicon and TiN are different because the range of the deposition temperature of TiN and silicon layers is relatively narrow. The method of processing the semiconductor wafer is provided. A step(1) is for loading the batch of the semiconductor wafers to a process chamber. A step(2) is for depositing the titanium nitride(TiN) on the wafer within the process chamber. A step(3) is for depositing the silicon on the wafer in the process chamber. The wafers are not removed from the process chamber between the deposition steps. The step for depositing titanium nitride and the step for depositing silicon are performed in the temperatures of about 400 ~ 550 deg C and in the temperature of 100 deg C.
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