| 摘要 |
<p>The processing procedure can be simplified while preventing the element failure in the formation of the storage electrode at the upper part of pillar. The method of manufacturing the semiconductor device including the vertical channel transistor comprises as follows. A step is for forming a plurality of pillars(P) having the hard mask pattern on the substrate(400). A step is for forming the insulating layer(404) on the overall resultant structure. A step is for performing the planarization process on the hard mask pattern and insulating layer pillar to expose the pillar. A step is for forming the storage electrode on the exposed pillar. After the pillar formation step, a step is for forming the surrounding gate electrode(405) to surrounds the outer circumference of the lower part of the pillar. The outer circumference of the pillar lower part has the recessed vertical channel transistor.</p> |
