发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided to decrease the number of test pin to half than that of conventional device by using only first address buffer in test. In a semiconductor memory device, a first address buffer(310) is used in a test mode and a normal mode and especially more addresses than normal mode are inputted to the first address buffer in the test mode. A second address buffer(320) is disabled in the test mode. In the normal mode, an address inputted through the first address buffer and the second address buffer is transmitted and the address inputted through the first address buffer is transmitted in the test mode.
申请公布号 KR20080100549(A) 申请公布日期 2008.11.19
申请号 KR20070046379 申请日期 2007.05.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SHIN, BEOM JU
分类号 G11C11/408;G11C29/00 主分类号 G11C11/408
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