发明名称 Nanowire light emitting device and method of fabricating the same
摘要 A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
申请公布号 US7453097(B2) 申请公布日期 2008.11.18
申请号 US20050100376 申请日期 2005.04.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JIN YOUNG-GU;LEE SUNG-HOON;LEE HYO-SUG;CHOI BYOUNG-LYONG;KIM JONG-SEOB
分类号 H01L29/06;H01L27/15;H01L33/28;H01L33/36;H01L51/50 主分类号 H01L29/06
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