发明名称 |
Nanowire light emitting device and method of fabricating the same |
摘要 |
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.
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申请公布号 |
US7453097(B2) |
申请公布日期 |
2008.11.18 |
申请号 |
US20050100376 |
申请日期 |
2005.04.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JIN YOUNG-GU;LEE SUNG-HOON;LEE HYO-SUG;CHOI BYOUNG-LYONG;KIM JONG-SEOB |
分类号 |
H01L29/06;H01L27/15;H01L33/28;H01L33/36;H01L51/50 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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地址 |
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