发明名称 |
Semiconductor devices and methods for manufacturing the same |
摘要 |
Semiconductor devices and methods for manufacturing the same are disclosed. An example method includes loading a first substrate to be provided with an oxynitride layer along with a second substrate having a nitride layer in a boat, and forming the oxynitride layer on the first substrate by placing the boat into a furnace and thermally treating the boat under an oxygen atmosphere.
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申请公布号 |
US7452830(B2) |
申请公布日期 |
2008.11.18 |
申请号 |
US20050191182 |
申请日期 |
2005.07.27 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SHIN CHUL-HO;KIM TAE-HONG |
分类号 |
H01L21/318;H01L29/94;H01L21/31;H01L21/324;H01L21/336 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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